In the field of new energy and industrial power supply, efficient and highly reliable power devices are the core of system design. Huatai Electronics officially releases new SJ-IGBT family products; HGW75N65S2HEM and HKW75N65S2HEM, with dual specifications of 650V/75A, ultra-low loss and intelligent integrated design, provide a more efficient and reliable solution for medium and high voltage applications

With industrial RF power supplies, particle accelerators, medical imaging< With the rapid development of fields such as radio frequency heating, radio frequency power amplifiers are facing unprecedented technological challenges. High power, high efficiency, and high reliability have become the core directions for the development of RF power amplifier devices. In this context, Huatai Electronics has launched the 3K0 RF power amplifier device, which has successfully stood at the forefront of the industry and become a benchmark product in the RF power amplifier field with multiple technological breakthroughs such as ultra-high voltage RF-LDMOS process and packaging

In recent years, with the acceleration of global energy transformation, the fields of photovoltaic power generation and variable frequency control have experienced explosive growth. As the core control device in this field, the performance of MCU chips directly determines the efficiency, reliability, and cost competitiveness of the system. Huatai Electronics' MCU is a high-performance control chip developed based on the ARM dual core Cortex-M7 architecture, which has been widely used in photovoltaic inverters and industrial frequency converters. However, facing the ecological barriers of international giants and the high relocation costs of customer systems, how to break through the bottleneck of market trust has become a key issue. Recently, Huatai Electronics' SOC product line has successfully demonstrated its technological maturity by independently building inverter systems for chip full scenario verification, opening up a new path for market competition

Huatai Electronics has launched two new LDMOS amplifiers, HTM9GO9S015P and H9G3438M15P, which cover the frequency bands of 1.8-950 MHz and 3.4-3.8 GHz, respectively, and both provide an output power of 15W. These two products provide strong technical support for 5G and wireless communication applications with their efficient and stable performance