Use with N-channel MOSFETs and capacitors, its performance surpasses that of traditional Schottky diodes, featuring lower forward voltage, reduced losses, minimal reverse leakage current, and higher reverse voltage.
-Maximum reverse voltage of 100V -Low on-resistance and high duty cycle at control voltage -Zero quiescent power consumption -Reverse leakage current as low as 1μA
-Forward conduction voltage much lower than Schottky diode -Typical reverse leakage current as low as 0.1µA -99% duty cycle, effectively reducing power consumption during forward conduction