Watech has developed 650V and 1200V Super Junction IGBT (SJ-IGBT) product series. Compared to conventional trench-type IGBTs, Super Junction IGBTs leverage the advantages of super junction technology to effectively enhance forward conduction characteristics and switching performance. To date, SJ-IGBTs have entered large-scale deployment in fields such as photovoltaics and energy storage.

For high-voltage IGBTs, the epitaxial layer thickness plays a critical role in determining forward conduction characteristics. Under reverse bias conditions, SJ-IGBTs exhibit a flatter internal electric field distribution, enabling the use of thinner drift regions to meet voltage rating requirements. Reduced drift region thickness helps minimize carrier storage effects, thereby lowering the device's Vce_saturation voltage (Vce_sat) and improving switching speed.

The integration of super junction structures enables SJ-IGBTs to achieve optimal electrical characteristics—high voltage withstand capability and low saturation voltage. Ideally, during device turn-off, the low-doped epitaxial layer ensures required voltage blocking, while during conduction, a highly doped N+ region forms an efficient current path. This unique capability decouples the reverse blocking voltage and on-resistance functions, delivering enhanced performance in power applications.