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FS-IGBT Discrete Device Series

Overview

Watech has successfully mass-produced 1200V and 650V field-stop IGBTs (FS-IGBTs). These devices utilize internationally leading 7th-generation fabrication technology with refined trench gate design. This innovative architecture substantially reduces both conduction and switching losses while significantly enhancing short-circuit withstand capability, making the FS-IGBT particularly well-suited for industrial control module applications.

The FS-IGBT technology has now been widely implemented across multiple sectors including photovoltaic inverters, uninterruptible power supplies (UPS), general-purpose variable frequency drives, servo drives, and automotive air conditioning systems. This demonstrates the critical role this technology plays in energy conversion, power control, and automotive electronics, providing advanced solutions for enhancing efficiency and performance.

-Ultra-low switching losses
-Ultra-low static losses
-Internally integrated enhanced ESD protection (SiC Schottky diode/SBD or FRD selectable)
-Maximum junction temperature up to 175°C
-Compliant with JEDEC certification standards
-Enhanced system energy conversion efficiency
-Reduced system thermal management requirements
-Improved system power density
-Increased system switching frequency

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FAQ

Q: What are the advantages and disadvantages of Watech's IGBT products compared to other domestic brands in terms of performance and price?

A: The switch loss is 30% lower than that of competitors; Disadvantage: Excessive di/dt can easily lead to excessive voltage stress, requiring external circuit matching products with good cost-effectiveness. The product performance is better than that of international top competitors, and the price is basically the same as domestic IGBT.

Q: What are the advantages and disadvantages of SJIGBT compared to FSIGBT? Relevant test data needs to be provided, especially the disadvantages of SJ compared to FS. What problems have you encountered? Cost advantage? Supply? Or are there still some technical issues? Is it an important factor restricting the current development of SJIGBT.

A: The switch loss is 30% lower than that of competitors; Disadvantage: Excessive di/dt can easily lead to excessive voltage stress, requiring external circuit matching.

H8G1819M10P

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