HTH1D38S010P
Description
The HTH1D38S010P is a GaN Power Transistor designed for cellular base station applications with 10W saturation output power covering frequency range from 2.3 to 4.0 GHz.
Advantages
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Operating Frequency Range: 2.3 to 4.0 GHz
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Operating Drain Voltage: +48 V
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Saturation Output Power: 10 W
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Advanced Linearity Performance
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High Efficiency
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High Gain over the Frequency Range
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Small footprint package, DFN 4x4-6L
