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High Power Discrete Devices

Peak power 20W-1000W; operating frequency 10MHz-6GHz; developed based on independently-owned intellectual property rights on 28V, 50V LDMOS and GaN process platforms

  • Min. Freq.
    100 MHz
    700 MHz
    758 MHz
    1805 MHz
    2496 MHz
    3300 MHz
    4800 MHz
  • Max. Freq.
    803 MHz
    960 MHz
    2100 MHz
    2690 MHz
    2700 MHz
    3600 MHz
    3800 MHz
    4900 MHz
    NA
  • VDD
    24 V
    28 V
    48 V
  • Package
    ACS2110S-4L
    ACS3210S-4L
    ACC2110S-4L
    ACS2110S-4L2L
    PDFN5*5
    DFN5*5
    TO-270

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Product Number
Min. Freq.
Max. Freq.
VDD
Pavg(dBm)
DE@Pavg
Gain(dB)
ACPR(dBc)
Test Freq.(MHz)
MP Status
Package
Process
HTH8G09P550S 700 MHz 960 MHz 48 V 49 53.40% 20.4 -28.8 758 MP ACC2110S-4L LDMOS
HTH9G09P550S 700 MHz 960 MHz 48 V 49 54% 20 -25 945 MP ACS2110S-4L LDMOS
HTH9G09P700S 758 MHz 803 MHz 48 V 50.5 56% 19.5 -25 780 MP ACS3210S-4L LDMOS
HTN9G22P370S 1805 MHz NA 28 V 47.3 48% 16 -30 2140 MP ACS2110S-4L LDMOS
HTN8G27S015P 700 MHz 2700 MHz 28 V 30 12% 20.2 -49.5 2600 MP PDFN5*5 LDMOS
HTN8G36S015P 3300 MHz 3600 MHz 28 V 30 11.9% 18.2 -48.9 3450 MP PDFN5*5 LDMOS
HTH1D27P550S 2496 MHz 2690 MHz 48 V 49 56.30% 15.7 -26.8 2496 MP ACS2110S-4L2L GaN
HTH1D09P700S 700 960 48 50.5 0.633 17.9 -26.4 780 ACS2110S-4L GaN
HTH1D36P450H 3400 3600 48 47.4 0.487 14.5 -27 3500 ACC2110S-4L GaN
HTH1D38P060P 3300 4000 48 39 0.517 14.1 -28.9 3500 DFN7x6.5 GaN
HTH1D38S010P 2300 4000 48 27 0.178 19.3 -41.3 3600 DFN4x4 GaN
HTH9G09P551S 300 960 50 49 0.498 19.6 -51.4 628 ACS2110S-4L LDMOS
HTN7G21S040P 700 2100 28 36 0.176 22 -46 940 TO-270 LDMOS
HTN8G27P040P 2496 2690 30 38 0.49 17.5 -31 2600 DFN7.5x5 LDMOS
HTN8G27S020PG 700 2700 28 33 0.149 19.3 -47 2120 TO-270 LDMOS