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HKW40N120FHRA

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Advantages

  • Ultra-low switching losses

  • Ultra-low static losses

  • Internal integrated SiC Schottky Diode (SBD)

  • Plug-and-play replacement of pure Si-based IGBT

  • Maximum junction temperature 175℃

  • Qualified according to JEDEC for target applications

  • Pb-free lead plating;RoHS compliant

Related documents download

28V LDMOS MMIC

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